An Improved InGaN/GaN Light Emitting Diode

• Main Authors: Wu,Jou-Hsuan, 吳柔萱
• Other Authors: Shiou-Ying Cheng
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/55854314231693323998

碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 101 === In these studies, the state-of-the-art two-dimensional device simulation tool, ATLAS, from SILVACO is being evaluated for the purpose of studying light-emitting diodes (LEDs). It predicts the electron behavior of specified semiconductor structures, and provides insight into the internal physical mechanisms associated with device operation. We designed the active layer area is 300 μm 300 μm for blue InGaN/GaN multiple-quantum well (MQW) light-emitting diodes, using the SILVACO ATLAS tool, the two-dimensional device simulation package ATLAS was used to theoretically analyze physical device characteristic. Other important physical mechanisms and optical properties, such as luminescent power, electroluminescence intensity, energy band, electric field, carrier concentration, and recombination rate were also investigated in this study. First, doping of the electron-blocking, barrier and active region layers plays a crucial role in the efficiency of blue InGaN/GaN light-emitting diodes. The carrier concentration characteristics of InGaN/GaN LEDs are systematically studied. Next we investigate the original structure of InGaN/GaN LED. By inserting using Si δ-doped (n+) GaN/InGaN structure into the original structure, we can analyse whether it can improve the carrier confinement effect of quantum well in active region or not. And find out the best region to use Si δ-doped (n+) GaN/InGaN structure. Finally, the proposed structures with Si delta-doped GaN/InGaN are numerically simulated. In the meantime, a systematic analysis on the critical physical mechanisms relevant to the improvement of the optical performance. The carrier confinement effect has enhanced effectively with Si delta-doped GaN/InGaN structure. Key words: light-emitting diodes, InGaN, multiple-quantum well, δ-doped Author* Jou-Hsuan Wu Advisor** Shiou-Ying Cheng Ph. D.