Characteristics of TiO2-Based Flexible Resistive Switching Memory Improved by Al2O3 Thin Film

碩士 === 國立東華大學 === 電機工程學系 === 101 === In this thesis, chapter 1 introduces the non-volatile resistive random access memory (RRAM). It describes the background and motivation of non-volatile RRAM and introduces the basic structure and resistive switching mechanism of RRAM. Chapter 2 introduces exp...

Full description

Bibliographic Details
Main Authors: Wang-Ying Li, 李汪盈
Other Authors: Chun-Chieh Lin
Format: Others
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/43365669792394967587

Similar Items