Characteristics of TiO2-Based Flexible Resistive Switching Memory Improved by Al2O3 Thin Film

• Main Authors: Wang-Ying Li, 李汪盈
• Other Authors: Chun-Chieh Lin
• Format: Others
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/43365669792394967587

碩士 === 國立東華大學 === 電機工程學系 === 101 === In this thesis, chapter 1 introduces the non-volatile resistive random access memory (RRAM). It describes the background and motivation of non-volatile RRAM and introduces the basic structure and resistive switching mechanism of RRAM. Chapter 2 introduces experimental fabrication and material and electrical measurements. It also explains the method of bending test. Chapter 3 discusses material and electrical characteristics of the Al/Al2O3/TiO2/Al and Al/TiO2/Al devices before bending, under bending and after bending. We infer a possible resistive switching model in this chapter. Finally, chapter 4 concludes the experimental results. In this study, the Al/Al2O3/TiO2/Al flexible RRAM is improved by adding Al2O3 thin film. According to the experimental results, Al/Al2O3/TiO2/Al flexible RRAM has high endurances under bending and has more stable resistive switching characteristics. We infer that the switching position might happen at the interface between Al2O3 and TiO2 films. When the flexible device is under bending, it might produce some defects by stress. The defects might involve in resistive switching, so that make resistive switching characteristics more stable. After the device is bent for several times, we found that the flexible device is unaffected by bending times and the electrical characteristics of under bending and after bending samples are coincident. These results prove that the Al/ Al2O3/TiO2/Al flexible device has excellent flexibility and electrical characteristics, which is possibly used in next-generation flexible electronics.