Fabrication and characterization of ZrO2-based memory devices

碩士 === 國立彰化師範大學 === 光電科技研究所 === 101 === In the study, ZrO2 films deposited on Si substrates were prepared by the sol-gel method for the different polyvinyl alcohol (PVA)/Zr atomic concentration ratios. X-ray diffraction, scanning electron microscope and photoluminescence measurements were used to ch...

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Bibliographic Details
Main Authors: JEN FU YU, 余振富
Other Authors: 林祐仲
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/01227563167360139602

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