Effects of Selenization Pressure during Rapid Thermal Process on CIGS/MoSe2 Films and Solar Cells

• Main Authors: Shr Ruei-Fu, 時瑞甫
• Other Authors: Tomi T. Li
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/65438512850575681409

碩士 === 國立中央大學 === 機械工程學系 === 101 === In this study, it was mainly discussed the effect of selenium vapor to Cu(Inx,Ga1-x)Se2 thin film by using precursor-rapid thermal process (RTP) Selenization two-step method. The metallic precursors were formed by direct current (DC) magnetron sputtering system using CuInGa ternary alloy target with a composition ratio of Cu:In:Ga of 42:44:16 wt%. The structure of Se/CIG had two types under different thickness in each layers. The first structure was Se(1.8μm)/CIG(650nm); The second structure was Se(3.7μm)/CIG(1.3μm). The first structure used different selenium vapor under 23 Pa, 495 Pa and 1.45×104 Pa during selenization process, respectively. The second structure used different selenium vapor under 48 Pa, 1021 Pa and 1.45×104 Pa during selenization process, separately. Based on the experiment of first structure, the grain size would be larger and the quality of Cu(Inx,Ga1-x)Se2 thin film would be better with increasing selenium vapor. Although we could also find the same phenomenon in the second structure of Cu(Inx,Ga1-x)Se2 thin film with increasing Se vapor, the Cu(Inx,Ga1-x)Se2 thin film would be peeled off and MoSe2 thickness (~2μm) would be increased dramatically at 1.45×104 Pa. In the previous studies, if the thickness of MoSe2 was too thick that would influence Cu(Inx,Ga1-x)Se2 thin film to be peeled. Therefore, we used a pressure released vent module to leak over high selenium vapor for avoiding the peeling and decreasing the thickness of MoSe2 thin film. The CIGS thin films were measured by X-ray diffraction (XRD), Energy dispersive spectrometer (EDS), Field-emission scanning electron microscopy (FESEM) and Solar simulation. To analyze Cu(Inx,Ga1-x)Se2 thin film in the pressure released vent module, it was found that the grain size of film was larger, the thickness of MoSe2 was thinner and the quality of Cu(Inx,Ga1-x)Se2 film was better when compared to other Cu(Inx,Ga1-x)Se2 film under different selenium pressures. Based on the measurement of solar simulation, the best efficiency 5.2% was obtained in the second structure sample of the pressure released vent module under selenization process.