Analysis and Simulation of Semiconductor Devices by Triangular and Trapezoidal Meshes in Cylindrical Coordinate

• Main Authors: Sih-Hao Huang, 黃思皓
• Other Authors: 蔡曜聰
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/20276999478700542139

碩士 === 國立中央大學 === 電機工程學系 === 101 === The goal of the thesis is to develop the triangular mesh in polar coordinate system, verifying it has the similar characteristic as trapezoidal mesh. There are two equivalent circuit models of triangular mesh, one is acute, and the other is obtuse. According to the result of diode simulation, the property of triangular mesh is close to trapezoidal one, making sure that the mesh is accurate enough to simulate the diode. In the end, we develop a new mesh consists of trapezoidal and triangular meshes, improving the problem that the device can’t be simulated from origin by trapezoidal mesh. The error between mixed mesh and trapezoidal mesh is smaller than five percent, proving they are alike in the same cylindrical junction. The technology can be applied to arbitrary semiconductor junction, defining every region by different meshes to optimize the device.