Thermal stability of supersaturated carbon incorporation in silicon
碩士 === 國立中央大學 === 物理學系 === 101 === Due to large size mismatch between carbon (C) and silicon (Si), silicon carbon alloy (Si:C) is used as the stressors in the source and drain (S/D) of n-type metal-oxide-semiconductor field effect transistor (n-MOSFET) to improve the electron mobility. In addition,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/2mjhfa |