Study of Matching Characteristics on Parallel Connection for High Power Field Effect Transistor Device

• Main Authors: Chen, Szu-Hao, 陳思豪
• Other Authors: Cheng, Shy-Dong
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/81677127516821421662

碩士 === 國立交通大學 === 平面顯示技術碩士學位學程 === 101 === Energy transfer efficiency is one of the important issues in green energy industry. The performance of power devices is the critical role of the energy conversion efficiency. In order to achieve better performance of power conversion with low cost and high efficiency, parallel connection application of power device is a direct and important approach. The conventional power device is manufactured by Si material; the new materials of SiC and GaN are the two major technologies which would like to become the next key materials of power device in the next generation. GaN and SiC have the better material properties, such as wide band gap, high breakdown voltage, high electron mobility, high dielectric constant, etc. It’s very suitable for the applications of high power, high temperature and high frequency electrical device. GaN power device is the lateral structure for electron transportation, so it’s required to use the parallel connection with several devices for higher power driving. However, the power performance of parallel connection is below the expectation. From the investigation of Si/SiC/GaN FET power device characteristics with the positive temperature coefficient of RDS(on) , and compare the Parallel ID-VD curve of the three types of FET, this study has successfully applied Kelvin connection method to improve the AlGaN/GaN HMET performance of parallel connection up to 99%.