Numerical Study of GaAs-Based Dual Junction Quantum Dot Solar Cells

Numerical Study of GaAs-Based Dual Junction Quantum Dot Solar Cells

碩士 === 國立交通大學 === 影像與生醫光電研究所 === 101 === A novel combination of quantum dot intermediate band solar cell and dual-junction tandem cell is proposed and studied numerically. We built our device model by using MatlabR coding and commercial software SilvacoR and APSYSR. A proper inclusion of quantum-dot...

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Main Authors: Shih, Ching yu, 石謦毓
Other Authors: 林建中
Format: Others
Language:en_US
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/79369317880725751388
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spelling ndltd-TW-101NCTU57700032015-10-13T21:45:18Z http://ndltd.ncl.edu.tw/handle/79369317880725751388 Numerical Study of GaAs-Based Dual Junction Quantum Dot Solar Cells 雙接面砷化鎵量子點太陽能電池之數值分析 Shih, Ching yu 石謦毓 碩士 國立交通大學 影像與生醫光電研究所 101 A novel combination of quantum dot intermediate band solar cell and dual-junction tandem cell is proposed and studied numerically. We built our device model by using MatlabR coding and commercial software SilvacoR and APSYSR. A proper inclusion of quantum-dot-related carrier absorption is adapted through modified extinction coefficient k, and effective band gap of the device. The final calculation shows the optimal efficiency enhancement is about 1.11 times of the non-quantum-dot embedded device. This design has great potential to realize a triple junction result with a dual-junction photovoltaic device. 林建中 2012 學位論文 ; thesis 63 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 碩士 === 國立交通大學 === 影像與生醫光電研究所 === 101 === A novel combination of quantum dot intermediate band solar cell and dual-junction tandem cell is proposed and studied numerically. We built our device model by using MatlabR coding and commercial software SilvacoR and APSYSR. A proper inclusion of quantum-dot-related carrier absorption is adapted through modified extinction coefficient k, and effective band gap of the device. The final calculation shows the optimal efficiency enhancement is about 1.11 times of the non-quantum-dot embedded device. This design has great potential to realize a triple junction result with a dual-junction photovoltaic device.
author2 林建中
author_facet 林建中
Shih, Ching yu
石謦毓
author Shih, Ching yu
石謦毓
spellingShingle Shih, Ching yu
石謦毓
Numerical Study of GaAs-Based Dual Junction Quantum Dot Solar Cells
author_sort Shih, Ching yu
title Numerical Study of GaAs-Based Dual Junction Quantum Dot Solar Cells
title_short Numerical Study of GaAs-Based Dual Junction Quantum Dot Solar Cells
title_full Numerical Study of GaAs-Based Dual Junction Quantum Dot Solar Cells
title_fullStr Numerical Study of GaAs-Based Dual Junction Quantum Dot Solar Cells
title_full_unstemmed Numerical Study of GaAs-Based Dual Junction Quantum Dot Solar Cells
title_sort numerical study of gaas-based dual junction quantum dot solar cells
publishDate 2012
url http://ndltd.ncl.edu.tw/handle/79369317880725751388
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AT shíqìngyù shuāngjiēmiànshēnhuàjiāliàngzidiǎntàiyángnéngdiànchízhīshùzhífēnxī
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