Optimization of the hole blocking layer to improve photoconduction characteristics of high-gain avalanche photoconductor devices
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 101 === This research fabricated high-gain avalanche rushing amorphous photoconductors (HARP) for medical x-ray detector applications, using amorphous selenium (a-Se) as the photoconductive material because of its high photoconversion efficiency. Under a strong...
Main Authors: | Tang, Rung-Jie, 唐榮傑 |
---|---|
Other Authors: | Pang, Fu-Ming |
Format: | Others |
Language: | zh-TW |
Published: |
2013
|
Online Access: | http://ndltd.ncl.edu.tw/handle/55189222467331470204 |
Similar Items
-
The ZnO Hole Blocking Layer for High-gain Avalanche Rushing Photoconductor Devices(HARP) using Amorphous Selenium as the Photoconductor
by: Hu, Tian, et al.
Published: (2013) -
Avalanche gain in charge-coupled devices
by: Gajar, Stephanie Anne
Published: (2005) -
Organic multilayer photoconductor utilizing a spacer layer
by: Rowehl, Jill A. (Jill Annette)
Published: (2010) -
The hole mobility and photoconductive properties of rubrene
by: Williams, G. W.
Published: (1970) -
Large and persistent photoconductivity due to hole-hole correlation in CdS
by: Yin, Han, et al.
Published: (2018)