High Performance Dual Gate Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor With Nanometer Dot-like Doping
碩士 === 國立交通大學 === 光電工程學系 === 101 === Recently, a-IGZO is the high-potential material for active layer of thin film transistor. With a high mobility (>10 cm2/Vs) than conventional amorphous silicon semiconductor and a low operating voltage (< 5 V) and small sub-threshold voltage swing, amorphou...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/thqgg5 |