| Summary: | 碩士 === 國立交通大學 === 電子物理系所 === 101 === This paper first proposed using femtosecond laser pulses to grow copper zinc tin selenide thin film.We will deposit film on a soda glass substrate (SLG),and by regulating the temperature,pulse numbers,laser power to explore various parameters affecting the growth of this thin fim. One of our films by XRD to determine the quality and structure of the lattice, and use Raman spectroscopy to detect whether there are other miscellaneous film phase formation.And use EDS component analysis with Raman spectroscopy to explore changes in the fillm transitions. In the optical properties, we are measured the reflectance and transmittance by FTIR,and obtained the bandgap of the fim. The fim were compared with Raman spectroscopy and EDS to explore the Mechanism of change. Finally, we will use the optical pump–optical probe technology to discuss the life time of the film, and then mathematical fitting way to explain the film carrier dynamics.
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