Optical polarization of strain-free GaAs/AlGaAs quantum dot under electric fields

碩士 === 國立交通大學 === 電子物理系所 === 101 === Polarization-entangled photon pairs are essential elements in the applications of quantum information and communication. Electrical control of a polarization entangled photon pair emission from a semiconductor quantum dot (QD) is a desired feature of current’s...

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Bibliographic Details
Main Authors: Wu, Cheng-Wei, 吳晟煒
Other Authors: Cheng, Shun-Jen
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/79790059193937810537
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Summary:碩士 === 國立交通大學 === 電子物理系所 === 101 === Polarization-entangled photon pairs are essential elements in the applications of quantum information and communication. Electrical control of a polarization entangled photon pair emission from a semiconductor quantum dot (QD) is a desired feature of current’s science and technology. In this work, we theoretically study the electronic structures and optical polarization anisotropy of GaAs/AlGaAs quantum dots grown by droplet epitaxy with the application of vertical electric field, i.e. the static Stark effect. Numerical results and theoretical analysis based on multi-band k•p theory are presented. First, the single-particle spectrum of quantum dots are calculated by using multi-band k•p theory and finite difference method. Further, we investigate how the Stark effect affects the intensity and degree of polarization (DOP) of the emitted light from the biased QDs. The results suggest the electric controllability of optical polarization of GaAs/AlGaAs QD, especially the tall and asymmetric QDs.