Design, Fabrication, and Characterization of Si-Based ARROW-B Ring Resonator Sensors

碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 101 === In this study, ring resonator sensors with antiresonant reflecting optical waveguide of type B (ARROW-B) structures have been investigated. The ARROW-B ring resonator sensor was proposed to provide highly sensitivity characteristics to detect changes in ref...

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Bibliographic Details
Main Authors: Chen, Jie-Ting, 陳界廷
Other Authors: Huang,Yang-Tung
Format: Others
Language:en_US
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/4pru8w
Description
Summary:碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 101 === In this study, ring resonator sensors with antiresonant reflecting optical waveguide of type B (ARROW-B) structures have been investigated. The ARROW-B ring resonator sensor was proposed to provide highly sensitivity characteristics to detect changes in refractive index of the environment. The ARROW-B waveguide with a thick guiding region can provide efficient coupling with a single-mode fiber. Modal characteristics of ARROW-B were analyzed with simulation and designed for obtaining optimum sensitivity in aqueous environment. The characteristics of ARROW-B structure were analyzed with the transfer matrix method and the effective index method. We used the 2D-FDTD (finite-difference time-domain) to simulate the propagation characteristics and sensitivity of the ARROW-B ring resonator sensors. We designed the gap between the ring and the straight waveguide as 0.2, 0.4, 0.6, and 0.8 μm respectively. The simulation sensitivities were about 298, 320, 320, and 342 nm/RIU. We also designed a structure with a capping layer (SiOx) on the bus waveguide. The corresponding simulation sensitivities were about 320, 340, 320, and 320 nm/RIU respectively. The devices without capping layer were fabricated and characterized. The sensitivity of the fabricated ARROW-B ring resonator sensor was obtained as 230.5 nm/RIU for gap 0.4 μm.