| Summary: | 碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 101 === Recently, thin-film transistors (TFTs) have been attracted much attention. We have investigated the performance oxide thin film transistors with an amorphous indium gallium zinc oxide (-IGZO) channel and ZrO2/HfO2 gate dielectrics. The -IGZO has been recognized as an ideal TFT material for channel which having high mobility, high on/off ratio, and process availability at room temperature. However, the thickness reduction of the gate dielectric layer is limited due to the electron tunneling, while in High-k materials, the increase of the thickness reduces electron tunneling and keeps a high capacitance. ZrO2/HfO2 has been the proper material because its good properties: high dielectric constant, large band gap, and relatively low leakage current. This work is the report of characterizations of IGZO TFT with ZrO2/HfO2 gate dielectrics and Al electrodes.
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