Fully Transparent and Stable Resistive Switching Characteristics of Compact GZO Nanorods Thin Film for High-Performance NVM Application

• Main Authors: Ho, Yen-Ting, 何彥廷
• Other Authors: Tseng, Tseung-Yuen
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/928vz3

碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 101 === Nonvolatile memory (NVM) technology plays a crucial role in the semiconductor industry, due to the rapid progress of portable electronic devices. Nowadays, the mainstream of this technology is flash memory which is based on charge storage and is rapidly reaching its physical limits. Resistive random access memory (RRAM) has several advantages, such as simple structure, low scale of size, low power consumption, fast operation speed and high density. In addition, the transition metal oxides based RRAM is one of the most promising and emerging technologies for future semiconductor applications. On the other hand, the next generation display industry, all of the active elements and peripheral circuit will be fabricated on the same substrate. Therefore, it is important to investigate the transparent electronics to bring the era of system on panel (SOP) technology. In this thesis, the research is focused on the transparent RRAM fabrication with compact GZO nanorods film structure, and it will be described into four parts. Firstly, the modification of Ga/Zn molar ratio in order to get the densest parameter. Secondly, the modification of nanorod and ZnO seeding layer thickness in order to get the best electrical parameter. Thirdly, in order to discuss the switching mechanism of ITO/GZO nanorods/ZnO/ITO structure, pure nanorod structure, pure seeding layer structure, and nanorod add seeding layer structure are fabricated to give extensive understanding about the role of the nanorod and its characteristic. The average transmittances in the present device are large than 80% in the wavelength of visible light region from 400 to 800 nm. A high endurance more than 7000 cycles with the resistance ratios of HRS/LRS about 200 times are achieved in this device. GZO nanorods In addition, the present device shows fast speed operation property (80 ns) and good memory performances, such as good non-destructive read out and retention properties at 85 oC (stable resistance states for more than 105 s). Therefore, the ITO/GZO nanorods/ZnO/ITO device in this study is a good candidate for the transparent RRAM device application.