Improved Resistive Switching Characteristics by Using Post Deposition Annealing in Bilayer RRAM Structure
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 101 === In this thesis, the improvement of resistive switching characteristics is achieved by using post deposition annealing (PDA) treatment in O2 atmosphere on bottom oxide in bilayer structure. Due to the quality of bottom oxide film can be improved by post depo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91914305600955154255 |