Effects of InAs Quantum dots on Schottky Diodes and Field Effect Transistors

• Main Authors: Wang, Tsan-Hao, 王參豪
• Other Authors: Lin, Sheng-Di
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/00569942333525955656

碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 101 === This thesis present the study on how charge capturing/escaping of quantum dot (QD) layers affects measured the electrical characteristics of Schottky diodes and field effect transistors (FETs). For the Schottky diodes with QDs, the current-voltage (I-V) curves measured at low temperature exhibit different turn-on behavior from those without QDs, which can be explained by effective resistance model of QD layers. Clear features from QDs are observed with the frequency-dependent capacitance-voltage (C-V) results. According to our analysis, the C-V features can be attributed to the charging/discharging of QDs’ inter first and second energy levels.The extracted carrier capture/escape rate increases with increasing temperatures. For FETs, two sample structures are studied. The 2-D channel under the QD layers cannot be depleted by gate probably due to the distant gate metal. The other structure, although the 2-D channel can be well depleted, the charging states in the underneath QDs cannot be revealed either by I-V or C-V measurements. Further studies are needed to realize the QD-based memory device in the future.