Investigation and Comparison of Work Function Variation for FinFET and UTB SOI Devices using Voronoi Approach

• Main Author: 周劭衡
• Other Authors: 蘇彬
• Format: Others
• Language: en_US
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/49832511429474985972

碩士 === 國立交通大學 === 電子研究所 === 101 === Using a novel Voronoi simulation method that can physically and efficiently consider the interaction between neighboring grains, this thesis investigates and compares the impact of work function variation (WFV) on FinFET and Ultra-Thin-Body (UTB) SOI devices. Our study indicates that for a given electrostatic integrity and total effective gate area, the FinFET device exhibits better immunity to WFV than the UTB SOI counterpart. We further show that, unlike other sources of random variation, the WFV cannot be suppressed by equivalent oxide thickness (EOT) scaling. In addition, we have also compared the impact of WFV on FinFET and double gate (DG) tunneling FET (TFET) devices under comparable Ioff and effective width. We found that, unlike the FinFET device, the DG TFET exhibits significant SS variation. Moreover, the normalized drain-current variation in DG TFET shows significant Vg dependency. Compared with DG TFET devices, FinFET exhibits better immunity to WFV at very low voltage.