The Error of Matthiessen's Rule in MOSFET electron Universal Mobility and Its Correction

• Main Authors: Huang, Yi-Hui, 黃怡惠
• Other Authors: Chen, Ming-Jer
• Format: Others
• Language: en_US
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/24320968112496575136

碩士 === 國立交通大學 === 電子研究所 === 101 === An analysis of the errors caused by Matthiessen’s rule between the apparent universal mobility which is calculated by Matthiessen’s rule and the simulated universal mobility curves are presented in this thesis. To focus on the high surface field region, the universal mobility features two distinct scattering mechanisms: one of phonon alone and one of surface roughness alone. By means of the experimentally-validated simulation package consisting of a self-consistent solving of Schrődinger and Poisson’s equations and a universal mobility simulation program, we try to correct the experimental error of applying Matthiessen’s rule to MOSFET mobility universality. Thus, the aim of this work is to devise an error-free version of Matthiessen’s rule. The core of the new rule lies in a physically- based semi-empirical model, which explicitly expresses the errors due to the conventional use of Matthiessen’s rule as a function of both the lowest subband population and the relative strength of individual mobility components. The new model holds under practical conditions (with temperatures up to 400 K) and in a broad range of substrate doping concentrations (1014 to 1018 cm-3). Extension to the case of strain is also presented in terms of a uniaxial tensile stress of 500 MPa.