The Random Telegraph Noise (RTN) Analysis of Multi-Level Operation Methods in HfO2-based ResistiveRandom Access Memory
碩士 === 國立交通大學 === 電子研究所 === 101 === Resistance-change Random Access Memory (RRAM) has recently received much more attention owing to its potential layout toward high-density, low-cost, and low-energy non-volatile memory. More recently, the dielectric HfO2 has become the mainstream of modern transist...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52836838269945754723 |