Design and Implementation of Extremely Broad Band RF High Power Amplifier
碩士 === 國立交通大學 === 電機學院電子與光電學程 === 101 === Many wireless communication transceivers, radars and medical instruments involve RF power amplifier. To design a narrow band RF power amplifier is difficult, but to design a broad band RF power amplifier is even more challenged. This thesis introduces a...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4yj864 |
| Summary: | 碩士 === 國立交通大學 === 電機學院電子與光電學程 === 101 === Many wireless communication transceivers, radars and medical instruments involve RF power amplifier. To design a narrow band RF power amplifier is difficult, but to design a broad band RF power amplifier is even more challenged. This thesis introduces a method to design an extremely broad band RF power amplifier frequency ranging from VHF through UHF to lower L band.
A GaN HEMT is used to construct this power amplifier because of the intrinsic broad band and high power characteristic. To achieve such low Q in the pass band, a low pass type Bridged-T input matching network is adopted. Resistive feedback between the gate and the drain is used to enhance the gain flatness. The output matching network is
implemented with LC sections optimized for broad band performance.
The measurement data shows bandwidth ranging from 150 MHz to 1200 MHz, 5 W saturation output power, and PAE over 40%.
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