Study of GaN-Based Photonic Crystal Surface Emitting Lasers with Periodic and Quasi-Periodic Lattice

• Main Authors: Chen, Chih-Cheng, 陳治成
• Other Authors: Lu, Tien-Chang
• Format: Others
• Language: en_US
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/75925174726842744780

碩士 === 國立交通大學 === 光電工程研究所 === 101 === In this thesis, we have demonstrated GaN-based photonic crystal surface emitting laser (PCSELs) and photonic quasi-crystal surface emitting laser (PQCSELs). Their laser characteristics were also measured and analyzed. For the subject of GaN-based PCSEL, different from the membrane type strucutre, the epitaxy distributed Bragg reflector (DBR) was used in GaN-based PCSELs. It can be observed that the threshold energy density of DBR-type PCSELs are lower than membrane-type PCSELs. Different lattice types of GaN-based PCSELs including hexagonal, square and honeycomb lattice were fabricated and characterized. The honeycomb lattice type PCSELs show the lowest threshold energy density of 1.6 mJ/cm2. In addition, the experimental results were similar with the simulation results which calculated by multiple scattering method. For the subject of GaN-based PQCSEL, we have fabricated PQCSELs which operated at different band-edge modes. The relation betwen threshold energy density and band-edge order was investigated. The experimental results shows the lower band-edge mode order, the lower threshold energy density. The result is helpful for development of the low thrshold photonic crystal surface emitting laser.