Study on the time response of a-InGaZnO thin film transistor under pulse illumination and positive bias stress
碩士 === 國立交通大學 === 光電工程研究所 === 101 === The unique feature of high transparencyfor a-IGZO TFTs makes the development of the transparent electronics possible. However, the instability induced by light illumination as well as the gate bias may hinder the practical applications. In this work, the time re...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20509046238482510662 |