Implementation of a layout context extractor for layout-dependent effects application
碩士 === 國立交通大學 === 電機學院電子與光電學程 === 101 === As CMOS process continuous scaling, both transistor’s gate width and gate length are on a scale of nano-meters. Thanks to the new process technologies, a single chip carries enormous amount of transistors. Those technological advances enable higher sophistic...
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ndltd-TW-101NCTU51241302015-10-13T22:45:37Z http://ndltd.ncl.edu.tw/handle/95262683208273957554 Implementation of a layout context extractor for layout-dependent effects application 使用於佈局相依效應之佈局萃取器實現 Hung, Wei-Ming 洪偉銘 碩士 國立交通大學 電機學院電子與光電學程 101 As CMOS process continuous scaling, both transistor’s gate width and gate length are on a scale of nano-meters. Thanks to the new process technologies, a single chip carries enormous amount of transistors. Those technological advances enable higher sophisticated system in the foreseeable future. On the other hand, they also lead to many layout proximity effects. The effects impact not only on transistor’s electrical characteristics, but also in device modeling, model extraction and circuit design flows. In this thesis, we discussed different types of layout proximity effect and also realized a layout context extractor. The extractor detected the transistor’s placement context and reported it back to the design circuit. It shortens design cycle and minimize the uncertainty gap between pre-layout and post-layout simulations. The extractor was validated by a 28nm analog design circuit with BSIM4.6 model and achieved less than 1% difference between pre-layout and post-layout simulations. Chang, Kow-Ming 張國明 2013 學位論文 ; thesis 57 en_US |
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碩士 === 國立交通大學 === 電機學院電子與光電學程 === 101 === As CMOS process continuous scaling, both transistor’s gate width and gate length are on a scale of nano-meters. Thanks to the new process technologies, a single chip carries enormous amount of transistors. Those technological advances enable higher sophisticated system in the foreseeable future. On the other hand, they also lead to many layout proximity effects. The effects impact not only on transistor’s electrical characteristics, but also in device modeling, model extraction and circuit design flows.
In this thesis, we discussed different types of layout proximity effect and also realized a layout context extractor. The extractor detected the transistor’s placement context and reported it back to the design circuit. It shortens design cycle and minimize the uncertainty gap between pre-layout and post-layout simulations. The extractor was validated by a 28nm analog design circuit with BSIM4.6 model and achieved less than 1% difference between pre-layout and post-layout simulations.
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Chang, Kow-Ming |
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Chang, Kow-Ming Hung, Wei-Ming 洪偉銘 |
author |
Hung, Wei-Ming 洪偉銘 |
spellingShingle |
Hung, Wei-Ming 洪偉銘 Implementation of a layout context extractor for layout-dependent effects application |
author_sort |
Hung, Wei-Ming |
title |
Implementation of a layout context extractor for layout-dependent effects application |
title_short |
Implementation of a layout context extractor for layout-dependent effects application |
title_full |
Implementation of a layout context extractor for layout-dependent effects application |
title_fullStr |
Implementation of a layout context extractor for layout-dependent effects application |
title_full_unstemmed |
Implementation of a layout context extractor for layout-dependent effects application |
title_sort |
implementation of a layout context extractor for layout-dependent effects application |
publishDate |
2013 |
url |
http://ndltd.ncl.edu.tw/handle/95262683208273957554 |
work_keys_str_mv |
AT hungweiming implementationofalayoutcontextextractorforlayoutdependenteffectsapplication AT hóngwěimíng implementationofalayoutcontextextractorforlayoutdependenteffectsapplication AT hungweiming shǐyòngyúbùjúxiāngyīxiàoyīngzhībùjúcuìqǔqìshíxiàn AT hóngwěimíng shǐyòngyúbùjúxiāngyīxiàoyīngzhībùjúcuìqǔqìshíxiàn |
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