Investigation of High Quality GaN Layer by using Novel ELOG Technology
碩士 === 國立交通大學 === 光電系統研究所 === 101 === In this study, GaN-based light-emitting diodes (LEDs) with embedded air voids grown on patterned SiO2/sputtered AlN buffer layer/sapphire templates were investigated. To reduce growth time, one-step GaN epitaxy was achieved using patterned SiO2/sputtered AlN buf...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08391433159864948692 |