| Summary: | 碩士 === 國立暨南國際大學 === 應用化學系 === 101 === Organic field-effect transistors have been rapidly developed in the past decades. According to the charge-transport mode, molecular packing will effect the performance of mobility. So, the organic single crystal and their OFETs can be useful for the investigation of the intrinsic nature of the electrical properties and of the device characteristics. In this work, we use Si as substrate and SiO2 as the insulator. Single crystals have been growth using the physical vapor transport method to decrees the time scale of crystallization. Then, FTS films by vapor deposition protect the single crystal on the top of the device.
For one thing, We try many kinds of the device structures and the bottom-contact device is the only one could be measured. The highest hole mobility is 4.4 × 10-2 cm2/Vs. But the on/off ratio is so disappointing. It reveals a huge leakage current so that we have to change the protecting materials or device. So, this is our chief objective to improve the performance by finding the ideal device structures.
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