Study on Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition

• Main Authors: Chiang,Cheng-Yu, 江承育
• Other Authors: Henry J. H. Chen
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/45215087851070352038

碩士 === 國立暨南國際大學 === 電機工程學系 === 102 === In this thesis, the ZnO TFTs with finlike channels were fabricated by atomic layer deposition and nanoimprint technology. The electrical and material characterizations of ZnO thin film fabricated by plasma-assisted atomic layer deposition in low temperature then thermal annealing were studied. The preferred (002) peak orientation were improved in this study. The ZnO TFTs after in situ O2 annealing at temperature of 250℃, for 15 minutes then using hot plate annealing at temperature of 350℃, for 60 minutes, exhibits the largest on/off ratio(1.02×106), highest mobility(5.39 cm2/V．s), and sharpest subthreshold swing (1.08 V/dec) then other samples. The performance of ZnO finlike TFTs can be optimized by increasing the width/space ratio (l/s) of finlike structures. The ZnO finlike TFTs exhibits the higer on/off ratio(1.81×106), mobility(6.96 cm2/V．s), and sharper subthreshold swing (0.78 V/dec) The results of this study can be fabricated for the future flat-panel display applications.