Investigations of Rounding Corner Trench Structure for Organic Thin Film Transistors

• Main Authors: Hsu-Tang Liu, 劉旭唐
• Other Authors: Henry J. H. Chen
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/43347580576415006054

碩士 === 國立暨南國際大學 === 電機工程學系 === 102 === In this work, the organic thin film transistors (OTFTs) with periodical groove channels were fabricated by nano imprint lithography (NIL) technology. The periodical groove channels with sharp and rounded corners were first fabricated. Then, the device performances with various periods and different morphologies of groove channels were studied. The periodical groove channels were fabricated, on n+-Si substrate, by nano imprint technology. The sharp corners were rounded by thermal oxidation. Then the dielectric layers, HfO2/SiO2, were deposited by MOCVD and thermal oxidation on the periodical groove channels. The pentacene and S/D electrode (Au) were deposited by thermal evaporation. The groove channels cross-section and the pentacene surface morphology was investigated by scanning electron microscope (SEM) and atomic force microscope (AFM), respectively. As the results, the groove channels with the various periods and different morphologies were fabricated successfully. The transfer characteristic and electrical outputs of OTFTs are all improved with periodical grooves and rounded corners.