The Research of Dual Direct Injection Readout Circuit Design for Array Sensor

• Main Authors: Yao-Syun Wang, 王耀勳
• Other Authors: Tai-Ping Sun
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/45964600061799514937

碩士 === 國立暨南國際大學 === 電機工程學系 === 101 === This thesis has designed the combined dual direct injection readout circuit with the architecture of dual-band readout circuit in interlaced columns. The combined dual direct injection readout circuit uses the direct injection architecture which unit cell has dual pixel circuits. Receiving end of middle wavelength and long wavelength has each column select circuit and output buffer. Using focal plane arrays by an additional wavelength band can identify targets conveniently, so we use the results of this chip to achieve dual-band array image module for testing and integration. Finally, we transform waveform into gray level in different shade and it can assist dual-band IR sensors in circuit identification and video display. In the future there are a wider range of applications. This circuit uses TSMC 0.35um 2P4M CMOS 5V manufacturing process. The pixel circuit layout area is 40umx40um. Each pixel has two DI architecture and design order size 16x12 array readout circuits. Simulation input photo current for middle wavelength is setting 2nA ~ 4nA, and long wavelength is setting 6nA ~ 8nA.The circuit's output swing is 2.04V. Input measurement current range results 1.9pA ~ 50 nA. This chip has adjustable integration time. The pixel output maximum rate is 12 MHz. The system noise voltage Vrms is 0.68mV and signal to noise ratio is 69dB.While the overall power consumption is 18.01 mW.