Investigation of ZnO MOS Device with Magnetron Co-Sputtering SiO2-ZnO Nanocomposites Insulator Layer

• Main Authors: Wei-Hsiang,Lu, 呂維祥
• Other Authors: Wei-Chih Lai
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/26344659475871870384

碩士 === 國立成功大學 === 光電科學與工程學系 === 101 === In the recent years many nanodots memories have been researched for the reliability of using it to replace floating gate memories. In many of the components of the nanodots, the metal parts of the nanodots has been used as the memory storage device and it is possible that it could become the new generation of main components for memory storage devices. The metal nanodots have a high density of states around Fermi level, adjustable work functions and is not easily affected by energy perturbation caused by carrier confinements. Hence could decrease the voltage necessary for the components; increase the speed of erasing and imputing data and increase the preservation time for electrons. The material is used in this thesis is zinc oxide nanoparticles, with zinc oxide as the semiconductor. As zinc oxide is an inexpensive material with a wide bandgap of 3.4eV; a large exciton binding energy of 60meV at room temperature and is also capable of changing the density of oxygen vacancies and the Zn interstial atoms which consequently affects its conductivity. Therefore to utilize the mentioned conditions we will first use magnetron sputtering to create the MOS structure of the capacitors to observe the properties of the interface of the different variables ; then the magnetron co-sputtering to put the nanodots into the insulator, to observe the nanodot's storage ability。