Characterizations of ZnO-SiO2 Nanocomposite Film Based Optoelectronic Devices
博士 === 國立成功大學 === 光電科學與工程學系 === 101 === In this dissertation, zinc oxide-silicon dioxide (ZnO-SiO2) nanocomposite films were grown via a co-sputter system at room temperature (RT). High-resolution transmittance electron microscopy (HRTEM) results reveal that the diameter of ZnO nanoparticles in the...
Main Authors: | Jiun-TingChen, 陳俊廷 |
---|---|
Other Authors: | Wei-Chih Lai |
Format: | Others |
Language: | en_US |
Published: |
2013
|
Online Access: | http://ndltd.ncl.edu.tw/handle/40130247069853319438 |
Similar Items
-
Optoelectronic properties of nanocomposite devices based on ZnO and Si
by: Yung-Ting Chen, et al.
Published: (2011) -
Optoelectronics and Electronic Devices of Organic/Inorganic ZnO Nanocomposites
by: Chun-Yu Lee, et al.
Published: (2010) -
Investigation of ZnO MOS Device with Magnetron Co-Sputtering SiO2-ZnO Nanocomposites Insulator Layer
by: Wei-Hsiang,Lu, et al.
Published: (2013) -
Characterizations of ZnO Nanostructure Based Optoelectronic Devices
by: Cheng Pin, Chen, et al.
Published: (2010) -
Flexible ZnO-SiO2 nanocomposites solar-blind photodetector
by: Yu-JuiKao, et al.
Published: (2012)