| Summary: | 碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 101 === In this study, the amorphous Si solar cells with patterned nanostructure were fabricated using Plasma-Enhanced Chemical Vapor Deposition system (PECVD). The nanostructure is the ZnO nanorods grown using the hydrothermal method. The water droplets template method was used to define the growth pattern of nanostructure. In order to make the higher short-circuit current density for the conventional amorphous Si solar cells, absorption thickness is match with the transport distance of the photo-generated carriers. Thus, the absorption thickness was limited. The amorphous Si solar cells with patterned nanostructure have a larger absorption region in the nanostructure sidewall than the conventional amorphous Si solar cells. The transport direction of the photo-generated carriers in the nanostructure sidewall was vertical to the direction of the incident light, thus it could be obtained the larger absorption area and the lower transport path at the same time. Besides, the reflectance of the amorphous Si solar cells with patterned nanostructure could be decreased in comparison with that of the conventional amorphous Si solar cells. The associated short-circuit current density was increased from 11.31 mA/cm2 to 18.34 mA/cm2 when the absorption of the incident light increases. The conversion efficiency of the solar cells was significantly improved from 5.78% of the conventional amorphous Si solar cells to 8.10% of the amorphous Si solar cells with patterned nanostructure.
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