Influence of KrF Excimer Laser Annealing on the Performance of InGaZnO Thin-Film Transistors
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 101 === This study utilizes excimer laser annealing focusing on adjusting the oxygen vacancies of IGZO layer to improve TFTs’active layer. In this thesis, IGZO TFTs with Tantalum nitride (TaN) gate electrode and hafnium silicon oxide (HfSiO) gate insulator were fab...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69928593563940616269 |