| Summary: | 碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 101 === Solution-processed melanin, one of environmentally friendly and biocompatible biomaterial, was applied in pentacene-based organic thin film transistors (OTFTs) as gate dielectrics, and resistive random-access memories (RRAMs). The chemical composition of the solution-processed melanin thin film (C64N11O24) was verified through energy dispersive spectrometer and Raman spectra. The smooth surface morphology was analyzed by atomic force microscope, while the amorphous thin film was also observed via X-ray diffraction.
The electrical properties of thin film transistors show high field-effect mobility of 18.19 cm2V-1s-1, low threshold voltage of -0.4 V, and low subthreshold swing of 280 mV/decade. The good performance of OTFTs can be attributed to the negatively-charged melanin film due to the absence of H3O+ ions after baking treatment.
On the other hand, different top electrodes, bottom electrodes, as well as baking temperatures have been discussed in melanin thin film RRAMs. The best performance was obtained by using ITO/melanin/Al structure, which can be attributed to smooth surface and lower work function of top electrode than bottom electrode. The set/reset voltage and on/off ratio are -1.24/2.4 V and 4.7 x 103, respectively. The easily-formed filament results from the existence of ions in melanin, especially in film without baking.
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