Nanoepitaxy of III–V epi–layer onto nanopatterned and nanoscale stripe patterned Si substrate

博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 101 === GaAs and InAs are grown on geometric nanopatterned and nanoscale stripe patterned Si substrates with SiO2 as a mask by metal–organic vapor–phase epitaxy. Theoretical models suggest the possibility of strain relief and dislocation reduction via a decrease i...

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Bibliographic Details
Main Authors: Chao-WeiHsu, 許晁瑋
Other Authors: Yan-Kuin Su
Format: Others
Language:en_US
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/39654694959280214262

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