Epitaxial Growth and Structural Characterization of Single Crystalline Bi2Te3/Bi2Se3 Topological Insulator Multilayer
碩士 === 國立成功大學 === 物理學系碩博士班 === 101 === Bi2Te3/Bi2Se3 topological insulator multilayers have been successfully established on Al2O3 (0001) substrates by molecular beam epitaxy (MBE). In-situ reflection high energy electron diffraction (RHEED) and ex-situ atomic force microscopy (AFM) indicate the smo...
Main Authors: | Pin-HuiChen, 陳品卉 |
---|---|
Other Authors: | J. C. A. Huang |
Format: | Others |
Language: | en_US |
Published: |
2013
|
Online Access: | http://ndltd.ncl.edu.tw/handle/88022157468971825629 |
Similar Items
-
Infrared and Optical Studies of Topological Insulators BI2TE3 BI2SE3 and SB2TE3
by: Wolf, Michael Scott
Published: (2011) -
Pulsed-laser epitaxy of topological insulator Bi2Te3 thin films
by: Zhaoliang Liao, et al.
Published: (2019-04-01) -
Atomic structure of thin films and heterostructure of Bi2Te3 and Bi2Se3 topological insulators
by: Ghasemi, Arsham
Published: (2017) -
Molecular beam epitaxy of topological insulator Bi₂Se₃
by: Chen, Yuxuan, 1986-
Published: (2012) -
Molecular Beam Epitaxy and Characterization of the Magnetic Topological Insulator (V,Bi,Sb)\(_2\)Te\(_3\)
by: Winnerlein, Martin
Published: (2020)