Synthesis of Graphene on Cu-Ni Alloy by Chemical Vapor Deposition for Transparent Conductive Properties

• Main Authors: Lung-TsunHuang, 黃隆樽
• Other Authors: Jow-Lay Huang
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/51493325251102645474

碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 101 === Graphene having excellent optical transmittance, electron mobility, stable chemical properties and other properties, but is limited to the free electron concentration is insufficient and therefore can not meet the real application of the transparent conductive film. According to the results, 10 to 20 layers of graphene is the most suitable for use in a range of transparent conductive film. This study uses a copper-nickel alloy foil as a catalytic metal and the substrate, for the purpose of controlling the number of layers of graphene thin film growth. The first study is on the substrate grain size and preferred orientation, the results show a layer of precipitated manganese at high temperatures, causing the carbon source and substrate isolation, and can not effectively control the number of layers. So the second part, changing parameters of the growth graphene by changing the growth temperature, the reaction gas flow and pass into carbon time. That is less than 970 oC may be an amorphous graphene, but higher than 1000 oC is crystal graphene. The two significant differences by transmittance and Hall analysis, that the crystalline form has better performance. Our study could grow a high coverage ratio and a large area (cm level) of several layers of graphene resulting in a number of layers to 20 layers. The best value under the optical transmittance wavelength of 550 nm up to about 75%, measured sheet resistance of about 181 Ω/sq.