Study of Silicon Carbide Growth by Physical Vapor Transport Method Through Development of a Numerical System

碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 101 === Physical vapor transport method (PVT) is the major process for silicon carbide bulk production. In this study, thermal and flow numerical simulation system for high-temperature PVT crucible is built by finite element method (FDM), including electromagneti...

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Bibliographic Details
Main Authors: Chia-HuiHwang, 黃家輝
Other Authors: Weng-Sing Hwang
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/71187163877043855686