Fabrication of Graphene Thin Films byLangmuir-Blodgett Technique and the studies of theirElectrochemical Characteristics

碩士 === 國立成功大學 === 化學工程學系碩博士班 === 101 === In order to improve the dispersibility of graphene, we functionalize the graphite with oxidize agent by Hummer’s method .Due to the strong hydrophilic property of Graphene Oxide(GO), we add cationic surfactant(DDAB) to stabilize Graphene oxide at air/water in...

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Bibliographic Details
Main Authors: Yu-NingChiu, 邱俞寧
Other Authors: Yuh-Lang Lee
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/43694101827397215334
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Summary:碩士 === 國立成功大學 === 化學工程學系碩博士班 === 101 === In order to improve the dispersibility of graphene, we functionalize the graphite with oxidize agent by Hummer’s method .Due to the strong hydrophilic property of Graphene Oxide(GO), we add cationic surfactant(DDAB) to stabilize Graphene oxide at air/water interface. We study the behavior of GO/DDAB mixed monolayer on the air/water interface by using the pressure-area (π-A) isotherm. Then we transfer the GO/DDAB mix monolayer Langmuir-Blodgett film onto the substrate, and obeserve film surface morphology by TEM and AFM. In order to regain the film conductivity, we expose the GO/DDAB mix Langmuir-Blodgett film under UV light to form Reduce Graphene Oxide(rGO), then we observe the electrochemical property of LB film by cyclic Voltammetry , electrochemical impedance sepectroscopy, we also fabricate hydrogen peroxide sensor to get the sensor sensibility. According to experiment results, by controlling the ratio of GO and DDAB, well-dispersed GO thin film is fabricated. The edge plane structure will increase while the film dispersibility is improved, which may improve the film electrochemical property and sensing result. The sensor exhibits the highest current sensitivity (0.269μA/cm2.M) and the lowest the slope of current change (0.15μA/cm2.s).