| Summary: | 碩士 === 國立勤益科技大學 === 電子工程系 === 101 === Power device plays an important role in the development of technology. Everyday electronic device such as PCs, smartphones and power-saving LED always used Power devices. The design of the power device in this research can be used for devices that require 90nm and 130nm, which is suitable for consumer electronic products. It is also an important direction for the development of future power component design.
In this paper, a small power component designed to explore the basis. First, the differences in aspect ratio of the STI produce different power components. Then the length of the narrow channel power components to produce 90nm power components, and comparative analysis of the different structure of the STI process breakdown voltage characteristics.
However, due to the limit of current manufacturing technology and the voltage withstandability of the 130 nm power component, there is not a very well integrated production process. According to TSMC’s website, the 130 nm and 90 nm BCD technology is still under development. In this paper, first explore the next generation 90-nanometer technology issues in order to provide the future process improvements.
In this paper, the design of the drift region and the STI design are consistent with the current semiconductor manufacturing technology. All processes used by national laboratories also modeled the machine parameters. So the simulation process, will be the development and design of components used. This paper also found that the industry can’t properly produce the main production. Channel length of 90 nm power components, production often because of the pressure can’t be controlled drift region and the gate oxide layer can withstand high pressure problem. In this paper, the breakdown voltage drift region and present its analysis of the problem.
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