Effects of time interval and selenium admittance of selenization on the crystalline and morphological properties of Cu(In,Ga)Se2 films

• Main Authors: Po-Chao Chang, 張博超
• Other Authors: Hung-Jung Chen
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/57727344856579572312

碩士 === 國立中興大學 === 奈米科學研究所 === 101 === CuIn1-xGaxSe2 (CIGS) thin films were prepared by the selenization process using ditert-butylselenide (DTBSe) and their physics properties were discussed in this dissertation. According to the results, the increase of selenization time and the increase of DTBSe flow rate have made the grain growth of CIGS films. 　　As the DTBSe flow rate is one time (7.9 μmole/min) for 60 min., the line width of the CIGS (112) plane of the XRD diffraction signal decreased and the increase of the intensity of preferred orientation with cross sectional image of FE-SEM, it is shows densely crystal structure. For the electric properties, as the DTBSe flow rate is three times (23.7 μmole/min) for 15 min., it is achieved at 1.73 cm^2/V∙s and the hole concentration is about 3×10^18 cm^(-3) of the p-type CIGS thin films. It was found that a higher flow rate with shorter time of the selenization process leads to the residual copper selenide of the secondary phase, and excess Cu2-xSe is adhesive on the grain boundaries and on the surface of the CIGS films. With the increase of the selenization time, the CIGS growth exhausts the copper selenide, the profiles of Cu, In, Ga, and Se elements across the depth are uniformly distributed, and the thicknesses of the films are uniform.