Investigation on the characteristics of CuxS (1≦x≦2) films prepared by chemical bath deposition

• Main Authors: Cheng-Hsiu Tsai, 蔡承修
• Other Authors: Jyh-Rong Gong
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/84115087553161238621

碩士 === 國立中興大學 === 奈米科學研究所 === 101 === In this master thesis, the physical properties of copper sulfide (CuxS, 1≦x≦2) prepared by chemical bath deposition (CBD) were investigated. In this study, investigation on the effects of annealing on the physical properties of CuxS films under different conditions was performed. The optical, structural, elemental and conductive properties of CuxS films were characterized by UV-Vis spectroscopy, X-ray diffractometry (XRD), atomic force microscope (AFM), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and Hall measurements. It was found that CuxS films annealed at certain temperatures show phase transition that forms CuS, Cu1.8S and Cu2S, respectively. In particular, XRD results revealed the presence of CuO phase when the film was air-annealed at 200℃. SEM and AFM observations showed that the grain sizes of annealed CuxS becomes larger and CuxS grains coalesce with increasing annealing temperature. Based on the absorption plots of the CuxS films, the band gaps of the films were found to be in the range of 2.46 ~ 2.59 eV. Hole concentrations of the annealed CuxS films were found to decrease with increasing temperature. All the resistivities of the CuxS films are under the value of 1.10×10-2 Ω∙cm. The highest hole mobility of the annealed CuxS film occurs at 25.62 cm2/ V∙s vacuum-annealed Cu2S film at 400℃.