Atomic layer deposition of oxide semiconductor films and their applications in the transparent conductive layers of GaN-based light emitting diodes
博士 === 國立中興大學 === 物理學系所 === 101 === In this dissertation, metal oxide films including zinc oxide (ZnO), gallium doped zinc oxide (GZO), indium doped zinc oxide (IZO) and indium oxide (In2O3) were grown by using atomic layer deposition (ALD). Diethylzinc (DEZn), triethylgallium (TEGa), trimethylindiu...
Main Authors: | Kuo-Yi Yen, 嚴國藝 |
---|---|
Other Authors: | Jyh-Rong Gong |
Format: | Others |
Language: | en_US |
Published: |
2013
|
Online Access: | http://ndltd.ncl.edu.tw/handle/28772128445799934264 |
Similar Items
-
Study on the current distribution of GaN light emitting diodes with and without current blocking layer and different transparent-conductive-layer material and thicknesses
by: Yen-chao Liao, et al.
Published: (2011) -
Investigation of Sputtered Indium Tin Oxide Transparent Conductive Layer for GaN-Based Light-Emitting Diodes
by: Lin,Geng-Lan, et al.
Published: (2017) -
Effect of Al-Doped ZnO Transparent Conducting Layers on Performance of AlGaInP Light-Emitting Diodes Using Atomic Layer Deposition
by: Ming-Chun Tseng, et al.
Published: (2019) -
GaN-Based Light Emitting Diodes with AZO Stair-Like Transparent Layers
by: LIOU,SYUAN-HAO, et al.
Published: (2017) -
The Development of AlN/GaN Light Emitting Diode Grown by Plasma-Enhanced Atomic Layer Deposition
by: Hong-Chih Tang, et al.
Published: (2015)