| Summary: | 碩士 === 國立中興大學 === 物理學系所 === 101 === We investigate the electrical transportation properties of the antimony-doped germanium tin alloy grown by molecular beam epitaxy(MBE).We used transmission line method to study the contact resistance between germanium tin alloys and metal electrode. The ranges of contact resistance obtained are 12.2 Ωto 47.1Ω Compared the contact resistance with different annealing temperature, we found that a smaller contact resistance value can be obtained at 350 degree Celsius annealing temperature. The contact resistance value is 12.2Ω From the results of the Hall measurement from 11 K to 294 K, we obtained the carrier type, concentration, and mobility of samples. From the experiment results, this germanium/tin alloy is an N-Type semiconductor. The mobility is about 143 cm^2/V.s and the density is 3.6×10^13 cm^-2 at 294 K. At 11 K, the mobility is about 180 cm^2/V.s and the density is 1.6×10^13 cm^-2. We also investigated the temperature dependence of the mobility.
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