Study of Shallow Trench Isolation Processes to Improve the Reliability on Flash Memory
碩士 === 國立中興大學 === 材料科學與工程學系所 === 101 === Flash Memory Technology has been developed over 20 years, and advance 20nm node floating gate structural flash is main stream on non-volatile memory market. And it faces reliability failure on process critical dimension shrinkage, therefore, it is import...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97625039631290119288 |