| Summary: | 碩士 === 國立中興大學 === 光電工程研究所 === 101 === Abstract
In recent years, the research of Amorphous Oxide Semiconductor-based electronic components and the manufacturing of display products are so popular. Amorphous oxide semiconductor can be made at room temperature, and can be applied on the flexible substrate. The use of Amorphous Oxide Semiconductor for flexile substrates has many advantages such as more light, more thin, more flexible and can be large area production.
In this experiment, using Amorphous Oxide Semiconductor, a-IGZO for channel layer , and using UV instead of heat energy to cross-linked poly(4-viny phenol)(PVP) and poly(melamine-co-formaldehyde)(PMF) as insulator. And the thin film transistor (TFT) elements applied on flexible substrate PEN .
After the components was made, applying strain parallel/perpendicular direction to the channel , strain respectively at 0 , 0.13 , 0.156 , 0.208 , 0.313, 0.625 , 1.248 % , their corresponding cylinder of radius is ∞, 5,4,3,2, 0.5 cm.
In the parallel portion of the channel layer, with the increase of strain generated threshold voltage shift, when the Parallel Strain > 0.313%, the channel layer damaged. As for the perpendicular portion, when Perpendicular Strain < 0.313%, the threshold voltage not having any change, but when the perpendicular strain > 0.313%, the threshold voltage shift. The Parallel / Perpendicular Strain of the channel layer = 2.5%, a significant leakage current happened.
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