Study on the Effect of Photolithography Process Parameters in the Half-Tone Mask for Thin Film Transistors

• Main Authors: Yu-Ting Liu, 劉禹廷
• Other Authors: 裴靜偉
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/07588120540375015543

碩士 === 國立中興大學 === 光電工程研究所 === 101 === In general, most of five-mask process production are the thin-film transistor liquid crystal display industry including gate electrode, semiconductor layer, source, drain electrodes, and protective layer as well as the pixel electrode. The main topic of this thesis is to use of half-tone mask photolithography in the transistors on the relative position of the photo resist by exposure energy to produce thin residual effect. Then go through wet etching twice, dry etching twice and stripping once to complete semiconductor layer, the source and drain electrode pattern. It only required photolithography process once but in the same time it can reduce mask process once. During a photolithography parameters process, it can identify the maximum process window of the first dry etching conditions such as vacuum dry, soft bake, temperature control unit, exposure and developer. The various combinations of criteria with selection on each TFT-LCD factory production process conditions, cost and profit assessment that can all refer to the thesis on the selection of the appropriate productive conditions.