A Novel InGaAs PhotodiodeFabrication and Its Application

碩士 === 明新科技大學 === 電子工程研究所 === 101 === In this study, a two-dimension array of InGaAs photodiode with 0.9~1.7nm absorption wavelength was presented. By using the characteristic of wide wavelength range in InGaAs material, we designed several active regions in our novel devices for inducing expected p...

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Bibliographic Details
Main Authors: Wen-Chen Li, 李文欽
Other Authors: Chii-Wen Chen
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/02458916585528767709

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