Study of low resistance and high transmittance of ZnO/metal/ZnO thin films by using

• Main Authors: Xiang-jie Zhang, 張項捷
• Other Authors: Pang-Shiu Chen
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/57829992899776950859

碩士 === 明新科技大學 === 化學工程與材料科技系碩士班 === 101 === Transparent conductive oxide films exhibit high transmittance in visible region of the wavelength from 400 to 700 nm, and high conductivity. But, a single layer of transparent conductive oxide can not achieve a satisfactory conductivity. Inserting a thin low resistivity metal layer into the matrix of dielectric layer was prepared in this work. The multilayers have enough visible transmittance, and low resistivity. In this paper, Transparent conducting thin film, can be obtained by using a ZnO/Al/ZnO and ZnO/Cu/ZnO nano-laminates structure. ZnO and Al/Cu films were grown on sodalime glass by using RF and DC magnetron sputtering methods. The relationship between structuric, optical and electrical properties as well as the deposition parameters of ZnO and Al/Cu were investigated is this paper. The thickness of the films were measured by using α-step, the resistance of the layer were determined by a four-point probe method, optical property of stacked by using UV-VIS spectrometry was obtained. The resistivity of Al or Cu thin films increase as their thickness decreased. But the visible transmittance of the stacked layer show a different tendency. A figure of merit(FOM) was used to evulated and optimize layer structure for a multilayer with superior conductivity and visible transparency. A FOM of 1.6×10-4 Ω-1 at the visible wavelength of 550 nm for a ZnO/Al/ZnO stacked layer is achieved. A FOM of 7.95×10-3 Ω-1 at the visible wavelength of 550 nm for a ZnO/Cu/ZnO stacked layer is achieved. After annealing treatment at N2 ambient, the FOM of ZnO/Cu/ZnO increase. At 300℃, the FOM of ZnO/Cu/ZnO is up to 1.49×10-2 Ω-1。